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3N190 3N191
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N190 & 3N191 LOW GATE LEAKAGE CURRENT LOW TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation One Side Continuous Power Dissipation Both Sides Maximum Current Drain to Source2 Maximum Voltages Drain to Gate2 Drain to Source Gate to Gate
2 1
P-CHANNEL DUAL MOSFET ENHANCEMENT MODE
IGSS 10pA Crss 1.0pF
TO-78 BOTTOM VIEW C
-65 to +150 C -55 to +135 C 300mW 525mW 50mA 30V 30V 125V 80V
G1 S1 D1
2
4 3 5 6 1 7
G2 S2 D2
Transient Gate to Source2,3
MATCHING CHARACTERISTICS @ 25 C (unless otherwise stated) (VBS = 0V unless otherwise stated) SYMBOL
gfs1 gfs2
CHARACTERISTIC Forward Transconductance Ratio Gate to Source Threshold Voltage Differential Gate to Source Threshold Voltage 4 Differential with Temperature Gate to Source Threshold Voltage Differential with Temperature4
MIN 0.85
TYP
MAX UNITS 1.0 100 100
V C
CONDITIONS VDS = -15V, ID = -500A, f = 1kHz VDS = -15V, ID = -500A VDS = -15V, ID = -500A TS = -55 TO +25 C VDS = -15V, ID = -500A TS = +25 TO +125 C
VGS1-2
VGS1 - 2 T VGS1 - 2 T
mV
100
ELECTRICAL CHARACTERISTICS @ 25 C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL BVDSS BVSDS VGS VGS(th) IGSSR IGSSF IDSS ISDS ID(on) CHARACTERISTIC Drain to Source Breakdown Voltage Source to Drain Breakdown Voltage Gate to Source Voltage Gate to Source Threshold Voltage Reverse Gate Leakage Current Forward Gate Leakage Current Drain Leakage Current "Off" Source to Drain Leakage Current "Off" Drain Current "On" -5.0 MIN -40 -40 -3.0 -2.0 -2.0 -6.5 -5.0 -5.0 10 -10 -200 -400 -30.0 mA pA V TYP MAX UNITS CONDITIONS ID = -10A IS = -10A, VBD = 0V VDS = -15V, ID = -500A VDS = VGS, ID = -10A VDS = -15V, ID = -500A VGS = 40V VGS = -40V VDS = -15V VSD = -15V, VDB = 0V VDS = -15V, VGS = -10V
Linear Integrated Systems
* 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261
ELECTRICAL CHARACTERISTICS CONT. @ 25 C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL gfs Yos rds(on) Crss Ciss Coss CHARACTERISTIC Forward Transconductance5 Output Admittance Drain to Source "On" Resistance Reverse Transfer Capacitance Input Capacitance Output Shorted Output Capacitance Input Shorted MIN 1500 TYP MAX UNITS 4000 300 300 1.0 4.5 3.0 pF VDS = -15V, ID = -5mA, f = 1MHz S CONDITIONS VDS = -15V, ID = -5mA, f = 1kHz VDS = -20V, ID = -100A
SWITCHING CHARACTERISTICS SYMBOL td(on) tr toff CHARACTERISTIC Turn On Delay Time Turn On Rise Time Turn Off Time MIN TYP MAX UNITS 15 30 50 ns CONDITIONS VDD = -15V, ID(on) = -5mA, RG = RL = 1.4k
TO-78
0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.029 0.045
2 34 1 5 8 76
0.016 0.019 DIM. A 0.016 0.021 DIM. B
0.100
0.100 45 0.028 0.034
1. 2. 3. 4. 5.
Absolute maximum ratings are limiting values above which serviceability may be impaired. Per transistor. Approximately doubles for every 10 C increase in TA. Pulse: t = 300s, Duty Cycle 3% Measured at end points, TA and TB.
Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Linear Integrated Systems
* 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261

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